Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor

Formation of GeO<sub>2</sub> under Graphene on Ge(001)/Si(001) Substrates Using Water Vapor

The problem of graphene protection of Ge surfaces against oxidation is investigated. Raman, X-Ray diffraction (XRD), atomic force microscopy (AFM) and scanning electron microscopy (SEM) measurements of graphene epitaxially grown on Ge(001)/Si(001) substrates are presented. It is shown that the penet...

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Detalhes bibliográficos
Principais autores: Ewa Dumiszewska, Paweł Ciepielewski, Piotr A. Caban, Iwona Jóźwik, Jaroslaw Gaca, Jacek M. Baranowski
Formato: Artigo
Idioma:English
Publicado em: MDPI AG 2022-06-01
coleção:Molecules
Assuntos:
graphene
Raman spectroscopy
germanium oxide
Acesso em linha:https://www.mdpi.com/1420-3049/27/11/3636

Internet

https://www.mdpi.com/1420-3049/27/11/3636

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