EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS

EFFECTIVE SILICON DEVICE STRUCTURES WITH RADIATIVE RECOMBINATION ON DISLOCATIONS

The efficient electroluminescence in the region of band-to-band (1,1 eV) and dislocationrelated (D1 – 0,8 eV) transitions has been detected from Si p-n structures at room and liquid nitrogen temperatures. It was found that dislocation-related luminescence in Si single crystals is considerably strong...

Full description

Bibliographic Details
Main Authors: A. V. Mudryi, V. D. Zhivulko, F. Mofidnakhaei, G. D. Ivlev, M. V. Yakushev, R. W. Martin, A. V. Dvurechenskii, V. A. Zinovyev, Zh. V. Smagina, P. A. Kuchinskaja
Format: Article
Language:English
Published: Belarusian National Technical University 2015-03-01
Series:Pribory i Metody Izmerenij
Subjects:
кремниевые p-n структуры
вольт-амперные характеристики
дислокации
электролюминесценци
Online Access:https://pimi.bntu.by/jour/article/view/59

Internet

https://pimi.bntu.by/jour/article/view/59

Similar Items