Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States
In this study, the read operation of feedback field-effect transistors (FBFETs) with quasi-nonvolatile memory states was analyzed using a device simulator. For FBFETs, write pulses of 40 ns formed potential barriers in their channels, and charge carriers were accumulated (depleted) in these channels...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2024-01-01
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| Series: | Nanomaterials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/2079-4991/14/2/210 |