Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States
In this study, the read operation of feedback field-effect transistors (FBFETs) with quasi-nonvolatile memory states was analyzed using a device simulator. For FBFETs, write pulses of 40 ns formed potential barriers in their channels, and charge carriers were accumulated (depleted) in these channels...
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| Format: | Article |
| Language: | English |
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MDPI AG
2024-01-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/14/2/210 |
| _version_ | 1797342850988376064 |
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| author | Juhee Jeon Kyoungah Cho Sangsig Kim |
| author_facet | Juhee Jeon Kyoungah Cho Sangsig Kim |
| author_sort | Juhee Jeon |
| collection | DOAJ |
| description | In this study, the read operation of feedback field-effect transistors (FBFETs) with quasi-nonvolatile memory states was analyzed using a device simulator. For FBFETs, write pulses of 40 ns formed potential barriers in their channels, and charge carriers were accumulated (depleted) in these channels, generating the memory state “State 1 (State 0)”. Read pulses of 40 ns read these states with a retention time of 3 s, and the potential barrier formation and carrier accumulation were influenced by these read pulses. The potential barriers were analyzed, using junction voltage and current density to explore the memory states. Moreover, FBFETs exhibited nondestructive readout characteristics during the read operation, which depended on the read voltage and pulse width. |
| first_indexed | 2024-03-08T10:39:10Z |
| format | Article |
| id | doaj.art-394c5a4dfc994ee785ef4196679a78df |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-08T10:39:10Z |
| publishDate | 2024-01-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-394c5a4dfc994ee785ef4196679a78df2024-01-26T17:58:41ZengMDPI AGNanomaterials2079-49912024-01-0114221010.3390/nano14020210Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory StatesJuhee Jeon0Kyoungah Cho1Sangsig Kim2Department of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of KoreaDepartment of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of KoreaDepartment of Electrical Engineering, Korea University, 145 Anam-ro, Seongbuk-gu, Seoul 02841, Republic of KoreaIn this study, the read operation of feedback field-effect transistors (FBFETs) with quasi-nonvolatile memory states was analyzed using a device simulator. For FBFETs, write pulses of 40 ns formed potential barriers in their channels, and charge carriers were accumulated (depleted) in these channels, generating the memory state “State 1 (State 0)”. Read pulses of 40 ns read these states with a retention time of 3 s, and the potential barrier formation and carrier accumulation were influenced by these read pulses. The potential barriers were analyzed, using junction voltage and current density to explore the memory states. Moreover, FBFETs exhibited nondestructive readout characteristics during the read operation, which depended on the read voltage and pulse width.https://www.mdpi.com/2079-4991/14/2/210quasi-nonvolatile memoryTCADFBFETread operationrising time |
| spellingShingle | Juhee Jeon Kyoungah Cho Sangsig Kim Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States Nanomaterials quasi-nonvolatile memory TCAD FBFET read operation rising time |
| title | Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States |
| title_full | Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States |
| title_fullStr | Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States |
| title_full_unstemmed | Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States |
| title_short | Read Operation Mechanism of Feedback Field-Effect Transistors with Quasi-Nonvolatile Memory States |
| title_sort | read operation mechanism of feedback field effect transistors with quasi nonvolatile memory states |
| topic | quasi-nonvolatile memory TCAD FBFET read operation rising time |
| url | https://www.mdpi.com/2079-4991/14/2/210 |
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