An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency

An Improved P-Type Doped Barrier Surface AlGaN/GaN High Electron Mobility Transistor with High Power-Added Efficiency

An improved P-type doped barrier surface AlGaN/GaN high electron mobility transistor with high power-added efficiency (PDBS-HEMT) is proposed in this paper. Through the modelling and simulation of ISE-TCAD and ADS software, the influence of the P-type doped region on the performance parameters is st...

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Bibliographic Details
Main Authors: Hujun Jia, Xiaowei Wang, Mengyu Dong, Shunwei Zhu, Yintang Yang
Format: Article
Language:English
Published: MDPI AG 2021-08-01
Series:Micromachines
Subjects:
GaN
HEMT
PDBS
power-added efficiency
Online Access:https://www.mdpi.com/2072-666X/12/9/1035

Internet

https://www.mdpi.com/2072-666X/12/9/1035

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