Examination of thermal properties and degradation of InGaN - based diode lasers by thermoreflectance spectroscopy and focused ion beam etching
In this paper, thermal properties of InGaN-based diode lasers are investigated. The thermoreflectance technique was employed to study temperature distributions on the front facet of device. Measurements were performed, allowing investigation of the contribution of two main heat sources to the total...
| Main Authors: | , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-07-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4990867 |