A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

A D-Band Frequency-Doubling Traveling-Wave Amplifier Through Monolithic Integration of a SiC SIW and GaN HEMTs

We report a solid-state traveling-wave amplifier (TWA) realized through monolithic integration of transistors with a SiC substrate-integrated waveguide (SIW). The TWA uses a stepped-impedance microstrip line as the input divider, but a low-loss, high-power-capacity SIW as the output combiner. The in...

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Bibliographic Details
Main Authors: Lei Li, Patrick Fay, James C. M. Hwang
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of Microwaves
Subjects:
Frequency multipliers
millimeter wave
MMICs
power combiners
substrate integrated waveguides
traveling wave amplifiers
Online Access:https://ieeexplore.ieee.org/document/10363170/

Internet

https://ieeexplore.ieee.org/document/10363170/

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