Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes

Effect of Dielectric Distributed Bragg Reflector on Electrical and Optical Properties of GaN-Based Flip-Chip Light-Emitting Diodes

We demonstrated two types of GaN-based flip-chip light-emitting diodes (FCLEDs) with distributed Bragg reflector (DBR) and without DBR to investigate the effect of dielectric TiO<sub>2</sub>/SiO<sub>2</sub> DBR on optical and electrical characteristics of FCLEDs. The reflecto...

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Bibliographic Details
Main Authors: Shengjun Zhou, Haohao Xu, Mengling Liu, Xingtong Liu, Jie Zhao, Ning Li, Sheng Liu
Format: Article
Language:English
Published: MDPI AG 2018-12-01
Series:Micromachines
Subjects:
flip-chip light-emitting diodes
distributed Bragg reflector
light output power
external quantum efficiency
Online Access:https://www.mdpi.com/2072-666X/9/12/650

Internet

https://www.mdpi.com/2072-666X/9/12/650

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