Ultrahigh Performance UV Photodetector by Inserting an Al2O3 Nanolayer in NiO/n‐Si

Ultrahigh Performance UV Photodetector by Inserting an Al2O3 Nanolayer in NiO/n‐Si

Abstract Ultraviolet (UV) photodetectors have gained much attention due to their numerous important applications ranging from environmental monitoring to space communication. To date, most p‐NiO/n‐Si heterojunction photodetectors (HPDs) exhibit poor UV responsivity and slow response. This is mainly...

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Bibliographic Details
Main Authors: Xingzhao Ma, Libin Tang, Menghan Jia, Yuping Zhang, Wenbin Zuo, Yuhua Cai, Rui Li, Liqing Yang, Kar Seng Teng
Format: Article
Language:English
Published: Wiley-VCH 2024-09-01
Series:Advanced Electronic Materials
Subjects:
Al2O3
heterojunction
NiO
UV photodetector
Online Access:https://doi.org/10.1002/aelm.202300909

Internet

https://doi.org/10.1002/aelm.202300909

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