Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures

Defect-engineered graphene-on-silicon-carbide platform for magnetic field sensing at greatly elevated temperatures

High-temperature electrical properties of p-type hydrogen-intercalated quasi-free-standing epitaxial Chemical Vapor Deposition graphene on semi-insulating vanadium-compensated on-axis 6H-SiC(0001) and high-purity on-axis 4H-SiC(0001) originate from the double-carrier system of spontaneous-polarizati...

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Bibliographic Details
Main Authors: Tymoteusz Ciuk, Roman Kozłowski, Agata Romanowska, Andrzej Zagojski, Karolina Piętak-Jurczak, Beata Stańczyk, Krystyna Przyborowska, Dariusz Czołak, Paweł Kamiński
Format: Article
Language:English
Published: Elsevier 2023-12-01
Series:Carbon Trends
Subjects:
Graphene
Epitaxy
CVD
Ion implantation
Defect levels
HRPITS
Online Access:http://www.sciencedirect.com/science/article/pii/S2667056923000585

Internet

http://www.sciencedirect.com/science/article/pii/S2667056923000585

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