Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

Absence of free carriers in silicon nanocrystals grown from phosphorus- and boron-doped silicon-rich oxide and oxynitride

Phosphorus- and boron-doped silicon nanocrystals (Si NCs) embedded in silicon oxide matrix can be fabricated by plasma-enhanced chemical vapour deposition (PECVD). Conventionally, SiH4 and N2O are used as precursor gasses, which inevitably leads to the incorporation of ≈10 atom % nitrogen, rendering...

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Bibliographic Details
Main Authors: Daniel Hiller, Julian López-Vidrier, Keita Nomoto, Michael Wahl, Wolfgang Bock, Tomáš Chlouba, František Trojánek, Sebastian Gutsch, Margit Zacharias, Dirk König, Petr Malý, Michael Kopnarski
Format: Article
Language:English
Published: Beilstein-Institut 2018-05-01
Series:Beilstein Journal of Nanotechnology
Subjects:
atom probe tomography
doping
photoluminescence
silicon nanocrystals
transient transmission
Online Access:https://doi.org/10.3762/bjnano.9.141

Internet

https://doi.org/10.3762/bjnano.9.141

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