Method of Ga removal from a specimen on a microelectromechanical system-based chip for in-situ transmission electron microscopy
Abstract In-situ transmission electron microscopy (TEM) holders that employ a chip-type specimen stage have been widely utilized in recent years. The specimen on the microelectromechanical system (MEMS)-based chip is commonly prepared by focused ion beam (FIB) milling and ex-situ lift-out (EXLO). Ho...
| Main Authors: | , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2020-10-01
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| Series: | Applied Microscopy |
| Subjects: | |
| Online Access: | https://doi.org/10.1186/s42649-020-00043-6 |
| _version_ | 1819148598314532864 |
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| author | Yena Kwon Byeong-Seon An Yeon-Ju Shin Cheol-Woong Yang |
| author_facet | Yena Kwon Byeong-Seon An Yeon-Ju Shin Cheol-Woong Yang |
| author_sort | Yena Kwon |
| collection | DOAJ |
| description | Abstract In-situ transmission electron microscopy (TEM) holders that employ a chip-type specimen stage have been widely utilized in recent years. The specimen on the microelectromechanical system (MEMS)-based chip is commonly prepared by focused ion beam (FIB) milling and ex-situ lift-out (EXLO). However, the FIB-milled thin-foil specimens are inevitably contaminated with Ga+ ions. When these specimens are heated for real time observation, the Ga+ ions influence the reaction or aggregate in the protection layer. An effective method of removing the Ga residue by Ar+ ion milling within FIB system was explored in this study. However, the Ga residue remained in the thin-foil specimen that was extracted by EXLO from the trench after the conduct of Ar+ ion milling. To address this drawback, the thin-foil specimen was attached to an FIB lift-out grid, subjected to Ar+ ion milling, and subsequently transferred to an MEMS-based chip by EXLO. The removal of the Ga residue was confirmed by energy dispersive spectroscopy. |
| first_indexed | 2024-12-22T13:48:15Z |
| format | Article |
| id | doaj.art-3a014998759d437292d4cbe24ce8ea2f |
| institution | Directory Open Access Journal |
| issn | 2287-4445 |
| language | English |
| last_indexed | 2024-12-22T13:48:15Z |
| publishDate | 2020-10-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Applied Microscopy |
| spelling | doaj.art-3a014998759d437292d4cbe24ce8ea2f2022-12-21T18:23:44ZengSpringerOpenApplied Microscopy2287-44452020-10-015011610.1186/s42649-020-00043-6Method of Ga removal from a specimen on a microelectromechanical system-based chip for in-situ transmission electron microscopyYena Kwon0Byeong-Seon An1Yeon-Ju Shin2Cheol-Woong Yang3School of Advanced Materials Science and Engineering, Sungkyunkwan UniversitySchool of Advanced Materials Science and Engineering, Sungkyunkwan UniversityCooperative Center for Research Facilities, Sungkyunkwan UniversitySchool of Advanced Materials Science and Engineering, Sungkyunkwan UniversityAbstract In-situ transmission electron microscopy (TEM) holders that employ a chip-type specimen stage have been widely utilized in recent years. The specimen on the microelectromechanical system (MEMS)-based chip is commonly prepared by focused ion beam (FIB) milling and ex-situ lift-out (EXLO). However, the FIB-milled thin-foil specimens are inevitably contaminated with Ga+ ions. When these specimens are heated for real time observation, the Ga+ ions influence the reaction or aggregate in the protection layer. An effective method of removing the Ga residue by Ar+ ion milling within FIB system was explored in this study. However, the Ga residue remained in the thin-foil specimen that was extracted by EXLO from the trench after the conduct of Ar+ ion milling. To address this drawback, the thin-foil specimen was attached to an FIB lift-out grid, subjected to Ar+ ion milling, and subsequently transferred to an MEMS-based chip by EXLO. The removal of the Ga residue was confirmed by energy dispersive spectroscopy.https://doi.org/10.1186/s42649-020-00043-6Focused ion beamEx-situ lift-out systemGa residueMEMS-based chipAr+ ion milling |
| spellingShingle | Yena Kwon Byeong-Seon An Yeon-Ju Shin Cheol-Woong Yang Method of Ga removal from a specimen on a microelectromechanical system-based chip for in-situ transmission electron microscopy Applied Microscopy Focused ion beam Ex-situ lift-out system Ga residue MEMS-based chip Ar+ ion milling |
| title | Method of Ga removal from a specimen on a microelectromechanical system-based chip for in-situ transmission electron microscopy |
| title_full | Method of Ga removal from a specimen on a microelectromechanical system-based chip for in-situ transmission electron microscopy |
| title_fullStr | Method of Ga removal from a specimen on a microelectromechanical system-based chip for in-situ transmission electron microscopy |
| title_full_unstemmed | Method of Ga removal from a specimen on a microelectromechanical system-based chip for in-situ transmission electron microscopy |
| title_short | Method of Ga removal from a specimen on a microelectromechanical system-based chip for in-situ transmission electron microscopy |
| title_sort | method of ga removal from a specimen on a microelectromechanical system based chip for in situ transmission electron microscopy |
| topic | Focused ion beam Ex-situ lift-out system Ga residue MEMS-based chip Ar+ ion milling |
| url | https://doi.org/10.1186/s42649-020-00043-6 |
| work_keys_str_mv | AT yenakwon methodofgaremovalfromaspecimenonamicroelectromechanicalsystembasedchipforinsitutransmissionelectronmicroscopy AT byeongseonan methodofgaremovalfromaspecimenonamicroelectromechanicalsystembasedchipforinsitutransmissionelectronmicroscopy AT yeonjushin methodofgaremovalfromaspecimenonamicroelectromechanicalsystembasedchipforinsitutransmissionelectronmicroscopy AT cheolwoongyang methodofgaremovalfromaspecimenonamicroelectromechanicalsystembasedchipforinsitutransmissionelectronmicroscopy |