Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System

Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System

We fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is appropriate for the age of big data, which demands high speed and capacity. We produced a TaON layer by depositing a ZnO layer on a Ta...

Full description

Bibliographic Details
Main Authors: Inho Oh, Juyeong Pyo, Sungjun Kim
Format: Article
Language:English
Published: MDPI AG 2022-06-01
Series:Nanomaterials
Subjects:
memristor
resistive switching
low and high current
bilayer
ZnO
TaON
Online Access:https://www.mdpi.com/2079-4991/12/13/2185

Internet

https://www.mdpi.com/2079-4991/12/13/2185

Similar Items