Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System
We fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is appropriate for the age of big data, which demands high speed and capacity. We produced a TaON layer by depositing a ZnO layer on a Ta...
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| Format: | Article |
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MDPI AG
2022-06-01
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| Series: | Nanomaterials |
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| Online Access: | https://www.mdpi.com/2079-4991/12/13/2185 |
| _version_ | 1797442492249931776 |
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| author | Inho Oh Juyeong Pyo Sungjun Kim |
| author_facet | Inho Oh Juyeong Pyo Sungjun Kim |
| author_sort | Inho Oh |
| collection | DOAJ |
| description | We fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is appropriate for the age of big data, which demands high speed and capacity. We produced a TaON layer by depositing a ZnO layer on a TaN layer using an oxygen-reactive radio frequency (RF) sputtering system. The bi-layer formation of ZnO and TaON interferes with the filament rupture after the forming process and then raises the current level slightly. The current levels were divided into high- and low-compliance modes. The retention, endurance, and pulse conductance were verified with a neuromorphic device. This device was stable and less consumed when it was in low mode rather than high mode. |
| first_indexed | 2024-03-09T12:42:38Z |
| format | Article |
| id | doaj.art-3a34c66cb9b344c0868cb2a01ddce05e |
| institution | Directory Open Access Journal |
| issn | 2079-4991 |
| language | English |
| last_indexed | 2024-03-09T12:42:38Z |
| publishDate | 2022-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Nanomaterials |
| spelling | doaj.art-3a34c66cb9b344c0868cb2a01ddce05e2023-11-30T22:16:16ZengMDPI AGNanomaterials2079-49912022-06-011213218510.3390/nano12132185Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic SystemInho Oh0Juyeong Pyo1Sungjun Kim2Division of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaDivision of Electronics and Electrical Engineering, Dongguk University, Seoul 04620, KoreaWe fabricated an ITO/ZnO/TaON/TaN device as nonvolatile memory (NVM) with resistive switching for complementary metal-oxide-semiconductor (CMOS) compatibility. It is appropriate for the age of big data, which demands high speed and capacity. We produced a TaON layer by depositing a ZnO layer on a TaN layer using an oxygen-reactive radio frequency (RF) sputtering system. The bi-layer formation of ZnO and TaON interferes with the filament rupture after the forming process and then raises the current level slightly. The current levels were divided into high- and low-compliance modes. The retention, endurance, and pulse conductance were verified with a neuromorphic device. This device was stable and less consumed when it was in low mode rather than high mode.https://www.mdpi.com/2079-4991/12/13/2185memristorresistive switchinglow and high currentbilayerZnOTaON |
| spellingShingle | Inho Oh Juyeong Pyo Sungjun Kim Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System Nanomaterials memristor resistive switching low and high current bilayer ZnO TaON |
| title | Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System |
| title_full | Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System |
| title_fullStr | Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System |
| title_full_unstemmed | Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System |
| title_short | Resistive Switching and Synaptic Characteristics in ZnO/TaON-Based RRAM for Neuromorphic System |
| title_sort | resistive switching and synaptic characteristics in zno taon based rram for neuromorphic system |
| topic | memristor resistive switching low and high current bilayer ZnO TaON |
| url | https://www.mdpi.com/2079-4991/12/13/2185 |
| work_keys_str_mv | AT inhooh resistiveswitchingandsynapticcharacteristicsinznotaonbasedrramforneuromorphicsystem AT juyeongpyo resistiveswitchingandsynapticcharacteristicsinznotaonbasedrramforneuromorphicsystem AT sungjunkim resistiveswitchingandsynapticcharacteristicsinznotaonbasedrramforneuromorphicsystem |