Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

Improvement of interface morphology and luminescence properties of InGaN/GaN multiple quantum wells by thermal annealing treatment

We have demonstrated the role of thermal annealing treatment after InGaN quantum well layer growth to improve the interface morphology and luminescence properties of InGaN/GaN multiple quantum wells (MQWs). X-ray diffraction and transmission electron microscope analyses reveal that better structural...

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Bibliographic Details
Main Authors: Yufei Hou, Feng Liang, Degang Zhao, Zongshun Liu, Ping Chen, Jing Yang
Format: Article
Language:English
Published: Elsevier 2021-12-01
Series:Results in Physics
Subjects:
InGaN/GaN multiple quantum wells
Luminescence properties
Thermal annealing
Interface quality
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379721010457

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http://www.sciencedirect.com/science/article/pii/S2211379721010457

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