Low operating voltage memtransistors based on ion bombarded p‐type GeSe nanosheets for artificial synapse applications

Low operating voltage memtransistors based on ion bombarded p‐type GeSe nanosheets for artificial synapse applications

Abstract Two‐dimensional (2D) layered materials have many potential applications in memristors owing to their unique atomic structures and electronic properties. Memristors can overcome the in‐memory bottleneck for use in brain‐like neuromorphic computing. However, exploiting additional lateral memt...

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Bibliographic Details
Main Authors: Jing Wang, Dong He, Rui Chen, Hang Xu, Hongbo Wang, Menghua Yang, Qi Zhang, Changzhong Jiang, Wenqing Li, Xiaoping Ouyang, Xiangheng Xiao
Format: Article
Language:English
Published: Wiley 2023-12-01
Series:InfoMat
Subjects:
artificial synapses
GeSe nanosheet
interfacial modulation
low‐energy ion irradiation
memtransistor
Online Access:https://doi.org/10.1002/inf2.12476

Internet

https://doi.org/10.1002/inf2.12476

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