Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content

Substitutional synthesis of sub-nanometer InGaN/GaN quantum wells with high indium content

Abstract InGaN/GaN quantum wells (QWs) with sub-nanometer thickness can be employed in short-period superlattices for bandgap engineering of efficient optoelectronic devices, as well as for exploiting topological insulator behavior in III-nitride semiconductors. However, it had been argued that the...

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Bibliographic Details
Main Authors: I. G. Vasileiadis, L. Lymperakis, A. Adikimenakis, A. Gkotinakos, V. Devulapalli, C. H. Liebscher, M. Androulidaki, R. Hübner, Th. Karakostas, A. Georgakilas, Ph. Komninou, E. Dimakis, G. P. Dimitrakopulos
Format: Article
Language:English
Published: Nature Portfolio 2021-10-01
Series:Scientific Reports
Online Access:https://doi.org/10.1038/s41598-021-99989-0

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https://doi.org/10.1038/s41598-021-99989-0

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