Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators

Variability and high temperature reliability of graphene field-effect transistors with thin epitaxial CaF2 insulators

Abstract Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators which ideally should form atomically flat...

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Bibliographic Details
Main Authors: Yu. Yu. Illarionov, T. Knobloch, B. Uzlu, A. G. Banshchikov, I. A. Ivanov, V. Sverdlov, M. Otto, S. L. Stoll, M. I. Vexler, M. Waltl, Z. Wang, B. Manna, D. Neumaier, M. C. Lemme, N. S. Sokolov, T. Grasser
Format: Article
Language:English
Published: Nature Portfolio 2024-03-01
Series:npj 2D Materials and Applications
Online Access:https://doi.org/10.1038/s41699-024-00461-0

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https://doi.org/10.1038/s41699-024-00461-0

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