Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory

Program Start Bias Grouping to Compensate for the Geometric Property of a String in 3-D NAND Flash Memory

The string (STR) with various geometrical profiles in 3-D NAND flash cause the degradation of program efficiency. This is because the program speed differences among WL layers within the STR are caused by the geometrical properties observed through measurement results. In this work, we propose the m...

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Bibliographic Details
Main Authors: Sungju Kim, Sangmin Ahn, Sechun Park, Jongwoo Kim, Hyungcheol Shin
Format: Article
Language:English
Published: IEEE 2024-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
3-D NAND flash
critical dimension (CD)
geometrical property
threshold voltage (Vth) distribution
word line (WL) grouping
start bias (Vstart)
Online Access:https://ieeexplore.ieee.org/document/10459337/

Internet

https://ieeexplore.ieee.org/document/10459337/

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