Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode

Investigation on Capacitance Collapse Induced by Secondary Capture of Acceptor Traps in AlGaN/GaN Lateral Schottky Barrier Diode

In this study, a dedicated dynamic measurement system was used to investigate the transient capacitance and recovery process of AlGaN/GaN lateral Schottky barrier diodes (SBDs). With the consideration of acceptor traps in the C-doped buffer, the C-V characteristics and transient capacitance were mea...

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Bibliographic Details
Main Authors: Haitao Zhang, Xuanwu Kang, Yingkui Zheng, Ke Wei, Hao Wu, Xinyu Liu, Tianchun Ye, Zhi Jin
Format: Article
Language:English
Published: MDPI AG 2022-05-01
Series:Micromachines
Subjects:
GaN
SBD
Schottky barrier diode
simulation
capacitance collapse
acceptor trap
Online Access:https://www.mdpi.com/2072-666X/13/5/748

Internet

https://www.mdpi.com/2072-666X/13/5/748

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