An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

An Early Detection Circuit for Endurance Enhancement of Backfilled Contact Resistive Random Access Memory Array

Abstract As one of the most promising embedded non-volatile storage solutions for advanced CMOS modules, resistive random access memory’s (RRAM) applications depend highly on its cyclability. Through detailed analysis, links have been found between noise types, filament configurations and the occurr...

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Bibliographic Details
Main Authors: Yun-Feng Kao, Jiaw-Ren Shih, Chrong Jung Lin, Ya-Chin King
Format: Article
Language:English
Published: SpringerOpen 2021-07-01
Series:Nanoscale Research Letters
Subjects:
RRAM
Variability
Stochastic model
Monte Carlo Simulation
Trap-assisted tunneling
Online Access:https://doi.org/10.1186/s11671-021-03569-0

Internet

https://doi.org/10.1186/s11671-021-03569-0

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