Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)

Two-Dimensional Heterojunction Interlayer Tunneling Field Effect Transistors (Thin-TFETs)

Layered 2-D crystals embrace unique features of atomically thin bodies, dangling bond free interfaces, and step-like 2-D density of states. To exploit these features for the design of a steep slope transistor, we propose a Two-dimensional heterojunction interlayer tunneling field effect transistor (...

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Bibliographic Details
Main Authors: Mingda Oscar Li, David Esseni, Joseph J. Nahas, Debdeep Jena, Huili Grace Xing
Format: Article
Language:English
Published: IEEE 2015-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
Tunnel FET
2-D crystals
transport model
steep slope
subthreshold swing (SS)
layered materials
Online Access:https://ieeexplore.ieee.org/document/7006653/

Internet

https://ieeexplore.ieee.org/document/7006653/

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