n‐Type Doping Effect of CVD‐Grown Multilayer MoSe2 Thin Film Transistors by Two‐Step Functionalization

n‐Type Doping Effect of CVD‐Grown Multilayer MoSe2 Thin Film Transistors by Two‐Step Functionalization

Abstract Molybdenum diselenide (MoSe2) has attracted attention as a potential semiconductor platform. However, the as‐synthesized MoSe2 field‐effect transistors (FETs) tend to exhibit the arbitrary properties of n‐type, p‐type, or ambipolar behavior due to the uncontrolled growth condition. Here, tw...

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Bibliographic Details
Main Authors: Seongin Hong, Haelin Im, Young Ki Hong, Na Liu, Sunkook Kim, Jun Hong Park
Format: Article
Language:English
Published: Wiley-VCH 2018-12-01
Series:Advanced Electronic Materials
Subjects:
Al2O3 passivation
molybdenum diselenide
n‐type doping
O2 plasma treatment
transition metal dichalcogenide
Online Access:https://doi.org/10.1002/aelm.201800308

Internet

https://doi.org/10.1002/aelm.201800308

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