n‐Type Doping Effect of CVD‐Grown Multilayer MoSe2 Thin Film Transistors by Two‐Step Functionalization
Abstract Molybdenum diselenide (MoSe2) has attracted attention as a potential semiconductor platform. However, the as‐synthesized MoSe2 field‐effect transistors (FETs) tend to exhibit the arbitrary properties of n‐type, p‐type, or ambipolar behavior due to the uncontrolled growth condition. Here, tw...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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Wiley-VCH
2018-12-01
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| Series: | Advanced Electronic Materials |
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| Online Access: | https://doi.org/10.1002/aelm.201800308 |
| _version_ | 1797663930971062272 |
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| author | Seongin Hong Haelin Im Young Ki Hong Na Liu Sunkook Kim Jun Hong Park |
| author_facet | Seongin Hong Haelin Im Young Ki Hong Na Liu Sunkook Kim Jun Hong Park |
| author_sort | Seongin Hong |
| collection | DOAJ |
| description | Abstract Molybdenum diselenide (MoSe2) has attracted attention as a potential semiconductor platform. However, the as‐synthesized MoSe2 field‐effect transistors (FETs) tend to exhibit the arbitrary properties of n‐type, p‐type, or ambipolar behavior due to the uncontrolled growth condition. Here, two‐step functionalization is proposed to achieve n‐doping effect and long‐term stability in chemical vapor deposition (CVD)–grown MoSe2 FETs using oxygen plasma treatment followed by the deposition of an Al2O3 layer. After the two‐step surface functionalization procedure, three types of multilayer MoSe2 FETs are all converted to n‐type with the improvement of their electrical characteristics and stability; the n‐doped multilayer MoSe2 FETs exhibit an enhancement in field‐effect mobility from 12.23 to 31.57 cm2 V−1 s−1 and a 3 times higher Ion/Ioff, compared to pristine multilayer MoSe2 FETs. This enhancement of electric performance is attributed to the oxidation of topmost MoSe2 to interfacial MoOx with SeOx induced by the oxygen plasma treatment, as well as to the existence of fixed positive charges in deposited Al2O3. The functionalized devices exhibit excellent stability against stress, as confirmed with negative bias illumination stress tests for 7200 s. Moreover, an environmental stability test for 21 days reveals no degradation in electric performance of MoSe2 FETs. |
| first_indexed | 2024-03-11T19:21:56Z |
| format | Article |
| id | doaj.art-3b021a30e83c48438b83389ed39beeac |
| institution | Directory Open Access Journal |
| issn | 2199-160X |
| language | English |
| last_indexed | 2024-03-11T19:21:56Z |
| publishDate | 2018-12-01 |
| publisher | Wiley-VCH |
| record_format | Article |
| series | Advanced Electronic Materials |
| spelling | doaj.art-3b021a30e83c48438b83389ed39beeac2023-10-07T03:29:12ZengWiley-VCHAdvanced Electronic Materials2199-160X2018-12-01412n/an/a10.1002/aelm.201800308n‐Type Doping Effect of CVD‐Grown Multilayer MoSe2 Thin Film Transistors by Two‐Step FunctionalizationSeongin Hong0Haelin Im1Young Ki Hong2Na Liu3Sunkook Kim4Jun Hong Park5School of Advanced Materials Science & Engineering Sungkyunkwan University Suwon 440‐745 KoreaSchool of Advanced Materials Science & Engineering Sungkyunkwan University Suwon 440‐745 KoreaSchool of Advanced Materials Science & Engineering Sungkyunkwan University Suwon 440‐745 KoreaSchool of Advanced Materials Science & Engineering Sungkyunkwan University Suwon 440‐745 KoreaSchool of Advanced Materials Science & Engineering Sungkyunkwan University Suwon 440‐745 KoreaSchool of Materials Science & Engineering Gyeongsang National University Jinju 52828 KoreaAbstract Molybdenum diselenide (MoSe2) has attracted attention as a potential semiconductor platform. However, the as‐synthesized MoSe2 field‐effect transistors (FETs) tend to exhibit the arbitrary properties of n‐type, p‐type, or ambipolar behavior due to the uncontrolled growth condition. Here, two‐step functionalization is proposed to achieve n‐doping effect and long‐term stability in chemical vapor deposition (CVD)–grown MoSe2 FETs using oxygen plasma treatment followed by the deposition of an Al2O3 layer. After the two‐step surface functionalization procedure, three types of multilayer MoSe2 FETs are all converted to n‐type with the improvement of their electrical characteristics and stability; the n‐doped multilayer MoSe2 FETs exhibit an enhancement in field‐effect mobility from 12.23 to 31.57 cm2 V−1 s−1 and a 3 times higher Ion/Ioff, compared to pristine multilayer MoSe2 FETs. This enhancement of electric performance is attributed to the oxidation of topmost MoSe2 to interfacial MoOx with SeOx induced by the oxygen plasma treatment, as well as to the existence of fixed positive charges in deposited Al2O3. The functionalized devices exhibit excellent stability against stress, as confirmed with negative bias illumination stress tests for 7200 s. Moreover, an environmental stability test for 21 days reveals no degradation in electric performance of MoSe2 FETs.https://doi.org/10.1002/aelm.201800308Al2O3 passivationmolybdenum diseleniden‐type dopingO2 plasma treatmenttransition metal dichalcogenide |
| spellingShingle | Seongin Hong Haelin Im Young Ki Hong Na Liu Sunkook Kim Jun Hong Park n‐Type Doping Effect of CVD‐Grown Multilayer MoSe2 Thin Film Transistors by Two‐Step Functionalization Advanced Electronic Materials Al2O3 passivation molybdenum diselenide n‐type doping O2 plasma treatment transition metal dichalcogenide |
| title | n‐Type Doping Effect of CVD‐Grown Multilayer MoSe2 Thin Film Transistors by Two‐Step Functionalization |
| title_full | n‐Type Doping Effect of CVD‐Grown Multilayer MoSe2 Thin Film Transistors by Two‐Step Functionalization |
| title_fullStr | n‐Type Doping Effect of CVD‐Grown Multilayer MoSe2 Thin Film Transistors by Two‐Step Functionalization |
| title_full_unstemmed | n‐Type Doping Effect of CVD‐Grown Multilayer MoSe2 Thin Film Transistors by Two‐Step Functionalization |
| title_short | n‐Type Doping Effect of CVD‐Grown Multilayer MoSe2 Thin Film Transistors by Two‐Step Functionalization |
| title_sort | n type doping effect of cvd grown multilayer mose2 thin film transistors by two step functionalization |
| topic | Al2O3 passivation molybdenum diselenide n‐type doping O2 plasma treatment transition metal dichalcogenide |
| url | https://doi.org/10.1002/aelm.201800308 |
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