Reducing the specific on-resistance for a trench-gate-integrated SOI LDMOS by using the double silicon drift layers

Reducing the specific on-resistance for a trench-gate-integrated SOI LDMOS by using the double silicon drift layers

Double silicon drift layers are used to reduce the specific on-resistance (Ron,sp) for a trench-gate-integrated lateral double-diffused MOSFET (DDL TG LDMOS) based on SOI technology in this paper. A trench-gate is incorporated into the oxide trench, a n-type drift layer with a high doping concentrat...

Full description

Bibliographic Details
Main Authors: Yuan Wang, Shengdong Hu, Chang Liu, Jian'an Wang, Han Yang, Shenglong Ran, Jie Jiang, Gang Guo
Format: Article
Language:English
Published: Elsevier 2020-12-01
Series:Results in Physics
Subjects:
LDMOS
Double silicon drift layers
Breakdown voltage
Specific on-resistance
Online Access:http://www.sciencedirect.com/science/article/pii/S2211379720320295

Internet

http://www.sciencedirect.com/science/article/pii/S2211379720320295

Similar Items