A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile
Abstract A 100‐V Taper‐Shielded trench Gate (TSG) power metal‐oxide‐semiconductor field‐effect transistor (MOSFET) with superior figure‐of‐merit (FOM) is proposed and investigated in this paper. The gate of the proposed TSG‐MOSFET has a tapered shape to reduce the gate‐to‐drain overlap capacitance (...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2023-05-01
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| Series: | IET Power Electronics |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/pel2.12439 |