A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile

A 100‐V trench power MOSFET with taper‐shielded gate and non‐uniform drift region doping profile

Abstract A 100‐V Taper‐Shielded trench Gate (TSG) power metal‐oxide‐semiconductor field‐effect transistor (MOSFET) with superior figure‐of‐merit (FOM) is proposed and investigated in this paper. The gate of the proposed TSG‐MOSFET has a tapered shape to reduce the gate‐to‐drain overlap capacitance (...

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Bibliographic Details
Main Authors: Gaoqaing Deng, Jun Wang, Chen Tan, Yifan Wu, Shiwei Liang, Wai Tung Ng
Format: Article
Language:English
Published: Wiley 2023-05-01
Series:IET Power Electronics
Subjects:
electron density
power MOSFET
semiconductor devices
Online Access:https://doi.org/10.1049/pel2.12439

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