Studi Disorder Lapisan Tipis Amorf Silikon Karbon (A-Sic:H) Hasil Deposisi Metode Dc Sputtering
Disorder Study of Amorphous Silicon Carbon (a-SiC:H) Films Deposited by DC Sputtering Method. Disorder amorphous network of amorphous silicon carbon (a-SiC:H) films has been investigated for films prepared by dc sputtering method. The films were deposited using silicon target in argon and methane ga...
Main Authors: | , |
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Format: | Article |
Language: | English |
Published: |
Universitas Indonesia
2002-08-01
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Series: | Makara Seri Sains |
Subjects: | |
Online Access: | http://journal.ui.ac.id/science/article/view/163/159 |