Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors
This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>/HfO<sub>2</sub> dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the diele...
| Main Authors: | , , , , , |
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| Format: | Article |
| Language: | English |
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MDPI AG
2022-06-01
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| Series: | Molecules |
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| Online Access: | https://www.mdpi.com/1420-3049/27/12/3951 |
| _version_ | 1797483907194552320 |
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| author | Li Xiong Jin Hu Zhao Yang Xianglin Li Hang Zhang Guanhua Zhang |
| author_facet | Li Xiong Jin Hu Zhao Yang Xianglin Li Hang Zhang Guanhua Zhang |
| author_sort | Li Xiong |
| collection | DOAJ |
| description | This study presents the construction and dielectric properties investigation of atomic-layer-deposition Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>/HfO<sub>2</sub> dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al<sub>2</sub>O<sub>3</sub>-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm<sup>−2</sup>, desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10<sup>−10</sup> A·cm<sup>−2</sup>, and quadratic voltage coefficient of 303.6 ppm·V<sup>−2</sup>. Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm<sup>−2</sup> and 0.25 fF·µm<sup>−2</sup>. Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-<i>k</i> materials. All these results indicate potential applications in integrated passive devices. |
| first_indexed | 2024-03-09T22:54:00Z |
| format | Article |
| id | doaj.art-3b6946a1386b4f9b97116de98d24275b |
| institution | Directory Open Access Journal |
| issn | 1420-3049 |
| language | English |
| last_indexed | 2024-03-09T22:54:00Z |
| publishDate | 2022-06-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Molecules |
| spelling | doaj.art-3b6946a1386b4f9b97116de98d24275b2023-11-23T18:14:16ZengMDPI AGMolecules1420-30492022-06-012712395110.3390/molecules27123951Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) CapacitorsLi Xiong0Jin Hu1Zhao Yang2Xianglin Li3Hang Zhang4Guanhua Zhang5State Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, ChinaState Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, ChinaGuangdong Fenghua Advanced Technology Holding Co., Ltd., Zhaoqing 526060, ChinaSchool of Physics and Chemistry, Hunan First Normal University, Changsha 410205, ChinaKey Laboratory of Applied Surface and Colloid Chemistry, Ministry of Education, School of Chemistry and Chemical Engineering, Shaanxi Normal University, Xi’an 710119, ChinaState Key Laboratory of Advanced Design and Manufacturing for Vehicle Body, College of Mechanical and Vehicle Engineering, Hunan University, Changsha 410082, ChinaThis study presents the construction and dielectric properties investigation of atomic-layer-deposition Al<sub>2</sub>O<sub>3</sub>/TiO<sub>2</sub>/HfO<sub>2</sub> dielectric-film-based metal–insulator–metal (MIM) capacitors. The influence of the dielectric layer material and thickness on the performance of MIM capacitors are also systematically investigated. The morphology and surface roughness of dielectric films for different materials and thicknesses are analyzed via atomic force microscopy (AFM). Among them, the 25 nm Al<sub>2</sub>O<sub>3</sub>-based dielectric capacitor exhibits superior comprehensive electrical performance, including a high capacitance density of 7.89 fF·µm<sup>−2</sup>, desirable breakdown voltage and leakage current of about 12 V and 1.4 × 10<sup>−10</sup> A·cm<sup>−2</sup>, and quadratic voltage coefficient of 303.6 ppm·V<sup>−2</sup>. Simultaneously, the fabricated capacitor indicates desirable stability in terms of frequency and bias voltage (at 1 MHz), with the corresponding slight capacitance density variation of about 0.52 fF·µm<sup>−2</sup> and 0.25 fF·µm<sup>−2</sup>. Furthermore, the mechanism of the variation in capacitance density and leakage current might be attributed to the Poole–Frenkel emission and charge-trapping effect of the high-<i>k</i> materials. All these results indicate potential applications in integrated passive devices.https://www.mdpi.com/1420-3049/27/12/3951energy storagemetal–insulator–metal capacitorsatomic layer depositionlaser direct writingelectrical performance |
| spellingShingle | Li Xiong Jin Hu Zhao Yang Xianglin Li Hang Zhang Guanhua Zhang Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors Molecules energy storage metal–insulator–metal capacitors atomic layer deposition laser direct writing electrical performance |
| title | Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors |
| title_full | Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors |
| title_fullStr | Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors |
| title_full_unstemmed | Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors |
| title_short | Dielectric Properties Investigation of Metal–Insulator–Metal (MIM) Capacitors |
| title_sort | dielectric properties investigation of metal insulator metal mim capacitors |
| topic | energy storage metal–insulator–metal capacitors atomic layer deposition laser direct writing electrical performance |
| url | https://www.mdpi.com/1420-3049/27/12/3951 |
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