AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer

This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 a...

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Bibliographic Details
Main Authors: Xinke Liu, Hong Gu, Kuilong Li, Lunchun Guo, Deliang Zhu, Youming Lu, Jianfeng Wang, Hao-Chung Kuo, Zhihong Liu, Wenjun Liu, Lin Chen, Jianping Fang, Kah-Wee Ang, Ke Xu, Jin-Ping Ao
Format: Article
Language:English
Published: AIP Publishing LLC 2017-09-01
Series:AIP Advances
Online Access:http://dx.doi.org/10.1063/1.4999810

Internet

http://dx.doi.org/10.1063/1.4999810

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