AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer
This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 a...
| Main Authors: | , , , , , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2017-09-01
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| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.4999810 |
| _version_ | 1819147193657851904 |
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| author | Xinke Liu Hong Gu Kuilong Li Lunchun Guo Deliang Zhu Youming Lu Jianfeng Wang Hao-Chung Kuo Zhihong Liu Wenjun Liu Lin Chen Jianping Fang Kah-Wee Ang Ke Xu Jin-Ping Ao |
| author_facet | Xinke Liu Hong Gu Kuilong Li Lunchun Guo Deliang Zhu Youming Lu Jianfeng Wang Hao-Chung Kuo Zhihong Liu Wenjun Liu Lin Chen Jianping Fang Kah-Wee Ang Ke Xu Jin-Ping Ao |
| author_sort | Xinke Liu |
| collection | DOAJ |
| description | This paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications. |
| first_indexed | 2024-12-22T13:25:56Z |
| format | Article |
| id | doaj.art-3b80a0ebc2a24a97b8aee282465b6ff2 |
| institution | Directory Open Access Journal |
| issn | 2158-3226 |
| language | English |
| last_indexed | 2024-12-22T13:25:56Z |
| publishDate | 2017-09-01 |
| publisher | AIP Publishing LLC |
| record_format | Article |
| series | AIP Advances |
| spelling | doaj.art-3b80a0ebc2a24a97b8aee282465b6ff22022-12-21T18:24:18ZengAIP Publishing LLCAIP Advances2158-32262017-09-0179095305095305-710.1063/1.4999810026709ADVAlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN waferXinke Liu0Hong Gu1Kuilong Li2Lunchun Guo3Deliang Zhu4Youming Lu5Jianfeng Wang6Hao-Chung Kuo7Zhihong Liu8Wenjun Liu9Lin Chen10Jianping Fang11Kah-Wee Ang12Ke Xu13Jin-Ping Ao14College of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People’s Republic of ChinaCollege of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People’s Republic of ChinaCollege of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People’s Republic of ChinaCollege of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People’s Republic of ChinaCollege of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People’s Republic of ChinaCollege of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People’s Republic of ChinaSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, Suzhou 215123, People’s Republic of ChinaDepartment of Photonics and Institute of Electro-Optical Engineering, National Chiao Tung University, Hsinchu 300, TaiwanDepartment of Electrical and Computer Engineering, National University of Singapore, 117583, SingaporeDepartment of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of ChinaDepartment of Microelectronics, Fudan University, Shanghai 200433, People’s Republic of ChinaSchool of Microelectronics, Xidian University, Xi’an 710071, People’s Republic of ChinaDepartment of Electrical and Computer Engineering, National University of Singapore, 117583, SingaporeSuzhou Institute of Nano-Tech and Nano-Bionics (SINANO), CAS, Suzhou 215123, People’s Republic of ChinaCollege of Materials Science and Engineering, Shenzhen Key Laboratory of Special Functional Materials, Chinese Engineering and Research Institute of Microelectronics, Shenzhen University, Shenzhen 518060, People’s Republic of ChinaThis paper reported AlGaN/GaN high electron mobility transistors (HEMTs) with low sub-threshold swing SS on free-standing GaN wafer. High quality AlGaN/GaN epi-layer has been grown by metal-organic chemical vapor deposition (MOCVD) on free-standing GaN, small full-width hall maximum (FWHM) of 42.9 arcsec for (0002) GaN XRD peaks and ultralow dislocation density (∼104-105 cm-2) were obtained. Due to these extremely high quality material properties, the fabricated AlGaN/GaN HEMTs achieve a low SS (∼60 mV/decade), low hysteresis of 54 mV, and high peak electron mobility μeff of ∼1456 cm2V-1s-1. Systematic study of materials properties and device characteristics exhibits that GaN-on-GaN AlGaN/GaN HEMTs are promising candidate for next generation high power device applications.http://dx.doi.org/10.1063/1.4999810 |
| spellingShingle | Xinke Liu Hong Gu Kuilong Li Lunchun Guo Deliang Zhu Youming Lu Jianfeng Wang Hao-Chung Kuo Zhihong Liu Wenjun Liu Lin Chen Jianping Fang Kah-Wee Ang Ke Xu Jin-Ping Ao AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer AIP Advances |
| title | AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer |
| title_full | AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer |
| title_fullStr | AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer |
| title_full_unstemmed | AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer |
| title_short | AlGaN/GaN high electron mobility transistors with a low sub-threshold swing on free-standing GaN wafer |
| title_sort | algan gan high electron mobility transistors with a low sub threshold swing on free standing gan wafer |
| url | http://dx.doi.org/10.1063/1.4999810 |
| work_keys_str_mv | AT xinkeliu alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT honggu alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT kuilongli alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT lunchunguo alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT deliangzhu alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT youminglu alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT jianfengwang alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT haochungkuo alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT zhihongliu alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT wenjunliu alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT linchen alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT jianpingfang alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT kahweeang alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT kexu alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer AT jinpingao alganganhighelectronmobilitytransistorswithalowsubthresholdswingonfreestandingganwafer |