Investigation on the impact of hydrogen on the passivation of silicon surface states in clean and copper contaminated conditions
Hydrogen is identified as a useful technique to passivate defects within crystalline silicon. However, the effect of hydrogen passivation for a silicon surface is normally characterized as a reduction in surface recombination velocity (SRV), which is not enough to reflect the detailed changes of ele...
| Main Authors: | , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
AIP Publishing LLC
2019-10-01
|
| Series: | AIP Advances |
| Online Access: | http://dx.doi.org/10.1063/1.5122253 |