Analysis of temporal carrier build‐up in reconfigurable field‐effect transistor
Abstract Based on the analysis of the carrier density change of a symmetric gate reconfigurable field‐effect transistor that can operate p‐ or n‐type transistors in an integrated circuit (IC), its unique limiting factor, carrier build‐up time, is quantitatively derived for operating speed in additio...
| Main Authors: | , , , , |
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| Format: | Article |
| Language: | English |
| Published: |
Wiley
2022-01-01
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| Series: | Electronics Letters |
| Subjects: | |
| Online Access: | https://doi.org/10.1049/ell2.12344 |