High Selectivity, Low Damage ICP Etching of <em>p</em>-GaN over AlGaN for Normally-off <em>p</em>-GaN HEMTs Application

High Selectivity, Low Damage ICP Etching of <em>p</em>-GaN over AlGaN for Normally-off <em>p</em>-GaN HEMTs Application

A systematic study of the selective etching of <i>p</i>-GaN over AlGaN was carried out using a BCl<sub>3</sub>/SF<sub>6</sub> inductively coupled plasma (ICP) process. Compared to similar chemistry, a record high etch selectivity of 41:1 with a <i>p</i>...

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Bibliographic Details
Main Authors: Penghao Zhang, Luyu Wang, Kaiyue Zhu, Yannan Yang, Rong Fan, Maolin Pan, Saisheng Xu, Min Xu, Chen Wang, Chunlei Wu, David Wei Zhang
Format: Article
Language:English
Published: MDPI AG 2022-04-01
Series:Micromachines
Subjects:
<i>p</i>-GaN
selective etching
ICP
surface morphology
MIS capacitor
Online Access:https://www.mdpi.com/2072-666X/13/4/589

Internet

https://www.mdpi.com/2072-666X/13/4/589

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