High Selectivity, Low Damage ICP Etching of <em>p</em>-GaN over AlGaN for Normally-off <em>p</em>-GaN HEMTs Application
A systematic study of the selective etching of <i>p</i>-GaN over AlGaN was carried out using a BCl<sub>3</sub>/SF<sub>6</sub> inductively coupled plasma (ICP) process. Compared to similar chemistry, a record high etch selectivity of 41:1 with a <i>p</i>...
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MDPI AG
2022-04-01
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| Series: | Micromachines |
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| Online Access: | https://www.mdpi.com/2072-666X/13/4/589 |
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| author | Penghao Zhang Luyu Wang Kaiyue Zhu Yannan Yang Rong Fan Maolin Pan Saisheng Xu Min Xu Chen Wang Chunlei Wu David Wei Zhang |
| author_facet | Penghao Zhang Luyu Wang Kaiyue Zhu Yannan Yang Rong Fan Maolin Pan Saisheng Xu Min Xu Chen Wang Chunlei Wu David Wei Zhang |
| author_sort | Penghao Zhang |
| collection | DOAJ |
| description | A systematic study of the selective etching of <i>p</i>-GaN over AlGaN was carried out using a BCl<sub>3</sub>/SF<sub>6</sub> inductively coupled plasma (ICP) process. Compared to similar chemistry, a record high etch selectivity of 41:1 with a <i>p</i>-GaN etch rate of 3.4 nm/min was realized by optimizing the SF<sub>6</sub> concentration, chamber pressure, ICP and bias power. The surface morphology after <i>p</i>-GaN etching was characterized by AFM for both selective and nonselective processes, showing the exposed AlGaN surface RMS values of 0.43 nm and 0.99 nm, respectively. MIS-capacitor devices fabricated on the AlGaN surface with ALD-Al<sub>2</sub>O<sub>3</sub> as the gate dielectric after <i>p</i>-GaN etch showed the significant benefit of BCl<sub>3</sub>/SF<sub>6</sub> selective etch process. |
| first_indexed | 2024-03-09T04:22:45Z |
| format | Article |
| id | doaj.art-3bf45b27f6414f1d9265995beaf0d160 |
| institution | Directory Open Access Journal |
| issn | 2072-666X |
| language | English |
| last_indexed | 2024-03-09T04:22:45Z |
| publishDate | 2022-04-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Micromachines |
| spelling | doaj.art-3bf45b27f6414f1d9265995beaf0d1602023-12-03T13:44:08ZengMDPI AGMicromachines2072-666X2022-04-0113458910.3390/mi13040589High Selectivity, Low Damage ICP Etching of <em>p</em>-GaN over AlGaN for Normally-off <em>p</em>-GaN HEMTs ApplicationPenghao Zhang0Luyu Wang1Kaiyue Zhu2Yannan Yang3Rong Fan4Maolin Pan5Saisheng Xu6Min Xu7Chen Wang8Chunlei Wu9David Wei Zhang10State Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaDepartment of Electrical and Electronic Engineering, Xi’an Jiaotong-Liverpool University, Suzhou 215123, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaState Key Laboratory of ASIC and System, School of Microelectronics, Fudan University, Shanghai 200433, ChinaA systematic study of the selective etching of <i>p</i>-GaN over AlGaN was carried out using a BCl<sub>3</sub>/SF<sub>6</sub> inductively coupled plasma (ICP) process. Compared to similar chemistry, a record high etch selectivity of 41:1 with a <i>p</i>-GaN etch rate of 3.4 nm/min was realized by optimizing the SF<sub>6</sub> concentration, chamber pressure, ICP and bias power. The surface morphology after <i>p</i>-GaN etching was characterized by AFM for both selective and nonselective processes, showing the exposed AlGaN surface RMS values of 0.43 nm and 0.99 nm, respectively. MIS-capacitor devices fabricated on the AlGaN surface with ALD-Al<sub>2</sub>O<sub>3</sub> as the gate dielectric after <i>p</i>-GaN etch showed the significant benefit of BCl<sub>3</sub>/SF<sub>6</sub> selective etch process.https://www.mdpi.com/2072-666X/13/4/589<i>p</i>-GaNselective etchingICPsurface morphologyMIS capacitor |
| spellingShingle | Penghao Zhang Luyu Wang Kaiyue Zhu Yannan Yang Rong Fan Maolin Pan Saisheng Xu Min Xu Chen Wang Chunlei Wu David Wei Zhang High Selectivity, Low Damage ICP Etching of <em>p</em>-GaN over AlGaN for Normally-off <em>p</em>-GaN HEMTs Application Micromachines <i>p</i>-GaN selective etching ICP surface morphology MIS capacitor |
| title | High Selectivity, Low Damage ICP Etching of <em>p</em>-GaN over AlGaN for Normally-off <em>p</em>-GaN HEMTs Application |
| title_full | High Selectivity, Low Damage ICP Etching of <em>p</em>-GaN over AlGaN for Normally-off <em>p</em>-GaN HEMTs Application |
| title_fullStr | High Selectivity, Low Damage ICP Etching of <em>p</em>-GaN over AlGaN for Normally-off <em>p</em>-GaN HEMTs Application |
| title_full_unstemmed | High Selectivity, Low Damage ICP Etching of <em>p</em>-GaN over AlGaN for Normally-off <em>p</em>-GaN HEMTs Application |
| title_short | High Selectivity, Low Damage ICP Etching of <em>p</em>-GaN over AlGaN for Normally-off <em>p</em>-GaN HEMTs Application |
| title_sort | high selectivity low damage icp etching of em p em gan over algan for normally off em p em gan hemts application |
| topic | <i>p</i>-GaN selective etching ICP surface morphology MIS capacitor |
| url | https://www.mdpi.com/2072-666X/13/4/589 |
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