Exploring High-Spin Color Centers in Wide Band Gap Semiconductors SiC: A Comprehensive Magnetic Resonance Investigation (EPR and ENDOR Analysis)
High-spin defects (color centers) in wide-gap semiconductors are considered as a basis for the implementation of quantum technologies due to the unique combination of their spin, optical, charge, and coherent properties. A silicon carbide (SiC) crystal can act as a matrix for a wide variety of optic...
| Main Authors: | , , , , , , |
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| Formato: | Artigo |
| Idioma: | English |
| Publicado em: |
MDPI AG
2024-06-01
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| Colecção: | Molecules |
| Assuntos: | |
| Acesso em linha: | https://www.mdpi.com/1420-3049/29/13/3033 |