Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates

Depletion- and Enhancement-Mode p-Channel MISHFET Based on GaN/AlGaN Single Heterostructures on Sapphire Substrates

We report on p-channel metal-insulator-semiconductor heterostructure field-effect transistors (MISHFET) based on p-GaN/uid-GaN/Al textsubscript 0.29Ga textsubscript 0.71N single heterostructures on sapphire substrates, grown by metalorganic vapor phase epitaxy (MOVPE). The impact of p-GaN layer remo...

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Bibliographic Details
Main Authors: Carsten Beckmann, Zineng Yang, Jens Wieben, Thorsten Zweipfennig, Jasmin Ehrler, Arno Kirchbrucher, Holger Kalisch, Andrei Vescan
Format: Article
Language:English
Published: IEEE 2023-01-01
Series:IEEE Journal of the Electron Devices Society
Subjects:
2DHG
p-channel
e-mode
MISHFET
Online Access:https://ieeexplore.ieee.org/document/10104090/

Internet

https://ieeexplore.ieee.org/document/10104090/

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