Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

Improving Performance and Breakdown Voltage in Normally-Off GaN Recessed Gate MIS-HEMTs Using Atomic Layer Etching and Gate Field Plate for High-Power Device Applications

A typical method for normally-off operation, the metal–insulator–semiconductor-high electron mobility transistor (MIS-HEMT) has been investigated. Among various approaches, gate recessed MIS-HEMT have demonstrated a high gate voltage sweep and low leakage current characteristics. Despite their high...

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Bibliographic Details
Main Authors: An-Chen Liu, Po-Tsung Tu, Hsin-Chu Chen, Yung-Yu Lai, Po-Chun Yeh, Hao-Chung Kuo
Format: Article
Language:English
Published: MDPI AG 2023-08-01
Series:Micromachines
Subjects:
atomic layer etching (ALE)
MIS-HEMT
gate surface roughness
Online Access:https://www.mdpi.com/2072-666X/14/8/1582

Internet

https://www.mdpi.com/2072-666X/14/8/1582

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