Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

Spin‐Torque Memristors Based on Perpendicular Magnetic Tunnel Junctions for Neuromorphic Computing

Abstract Spin‐torque memristors are proposed in 2009, and can provide fast, low‐power, and infinite memristive behavior for neuromorphic computing and large‐density non‐volatile memory. However, the strict requirements of combining high magnetoresistance, stable domain wall pinning and current‐induc...

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Bibliographic Details
Main Authors: Xueying Zhang, Wenlong Cai, Mengxing Wang, Biao Pan, Kaihua Cao, Maosen Guo, Tianrui Zhang, Houyi Cheng, Shaoxin Li, Daoqian Zhu, Lin Wang, Fazhan Shi, Jiangfeng Du, Weisheng Zhao
Format: Article
Language:English
Published: Wiley 2021-05-01
Series:Advanced Science
Subjects:
chiral spin vortices
magnetic tunnel junctions
memristors
neuromorphic computing
spintronics
Online Access:https://doi.org/10.1002/advs.202004645

Internet

https://doi.org/10.1002/advs.202004645

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