Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact

Influence of Punch Trough Stop Layer and Well Depths on the Robustness of Bulk FinFETs to Heavy Ions Impact

This study analyzes the effects of the punch-through stop (PTS) layer and well depth in a bulk FinFET SRAM cell on the fraction of charge generated by an ion impact that is collected by the FinFET channel. More than 1700 3D TCAD simulations have been performed to obtain a detailed map of the sensiti...

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Bibliographic Details
Main Authors: Antonio Calomarde, Salvador Manich, Antonio Rubio, Francisco Gamiz
Format: Article
Language:English
Published: IEEE 2022-01-01
Series:IEEE Access
Subjects:
Charge collection
single event cross section
radiation hardening
soft error
single event transient (SET)
single event upset (SEU)
Online Access:https://ieeexplore.ieee.org/document/9766149/

Internet

https://ieeexplore.ieee.org/document/9766149/

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