Plasma-free anisotropic selective-area etching of β-Ga2O3 using forming gas under atmospheric pressure
We demonstrate a facile and safe anisotropic gas etching technique for β-Ga2O3 under atmospheric pressure using forming gas, a H2/N2 gas mixture containing 3.96 vol% H2. This etching gas, being neither explosive nor toxic, can be safely exhausted into the atmosphere, simplifying the etching system s...
| Main Authors: | , , |
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| Format: | Article |
| Language: | English |
| Published: |
Taylor & Francis Group
2024-12-01
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| Series: | Science and Technology of Advanced Materials |
| Subjects: | |
| Online Access: | https://www.tandfonline.com/doi/10.1080/14686996.2024.2378683 |