Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Piezoresistance Characterization of Silicon Nanowires in Uniaxial and Isostatic Pressure Variation

Silicon nanowires (SiNWs) are known to exhibit a large piezoresistance (PZR) effect, making them suitable for various sensing applications. Here, we report the results of a PZR investigation on randomly distributed and interconnected vertical silicon nanowire arrays as a pressure sensor. The samples...

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Bibliographic Details
Main Authors: Elham Fakhri, Rodica Plugaru, Muhammad Taha Sultan, Thorsteinn Hanning Kristinsson, Hákon Örn Árnason, Neculai Plugaru, Andrei Manolescu, Snorri Ingvarsson, Halldor Gudfinnur Svavarsson
Format: Article
Language:English
Published: MDPI AG 2022-08-01
Series:Sensors
Subjects:
silicon nanowires
MACE
piezoresistivity
Online Access:https://www.mdpi.com/1424-8220/22/17/6340

Internet

https://www.mdpi.com/1424-8220/22/17/6340

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