A Compact Current-Transfer Model in Resonant-Tunneling Structures with Consideration of Interelectronic Interaction

A Compact Current-Transfer Model in Resonant-Tunneling Structures with Consideration of Interelectronic Interaction

A compact analytical model of current transfer was developed to estimate the characteristics of heterostructured devices. The absence of empirical correction factors and the explicit accounting of the interelectronic interaction differentiates it from previous similar models. The model obtains an es...

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Bibliographic Details
Main Authors: Natalia Vetrova, Evgeny Kuimov, Sergey Meshkov, Mstislav Makeev, Vladimir Sinyakin, Vasiliy Shashurin
Format: Article
Language:English
Published: MDPI AG 2023-01-01
Series:Electronics
Subjects:
mathematical modeling
resonant-tunneling structures
self-consistent potential
electron concentration
resonant levels
semiconductor epitaxial layers
Online Access:https://www.mdpi.com/2079-9292/12/3/519

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https://www.mdpi.com/2079-9292/12/3/519

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