Remote Plasma Atomic Layer Deposition of SiN<sub>x</sub> Using Cyclosilazane and H<sub>2</sub>/N<sub>2</sub> Plasma

Remote Plasma Atomic Layer Deposition of SiN<sub>x</sub> Using Cyclosilazane and H<sub>2</sub>/N<sub>2</sub> Plasma

Silicon nitride (SiN<sub>x</sub>) thin films using 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2) and N<sub>2</sub> plasma were investigated. The growth rate of SiN<sub>x</sub> thin films was saturated in the range of 200&#8722;500 &#176;C, yieldi...

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Bibliographic Details
Main Authors: Haewon Cho, Namgue Lee, Hyeongsu Choi, Hyunwoo Park, Chanwon Jung, Seokhwi Song, Hyunwoo Yuk, Youngjoon Kim, Jong-Woo Kim, Keunsik Kim, Youngtae Choi, Suhyeon Park, Yurim Kwon, Hyeongtag Jeon
Format: Article
Language:English
Published: MDPI AG 2019-08-01
Series:Applied Sciences
Subjects:
atomic layer deposition
remote plasma
SiN<sub>x</sub> thin films
Online Access:https://www.mdpi.com/2076-3417/9/17/3531

Internet

https://www.mdpi.com/2076-3417/9/17/3531

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