Remote Plasma Atomic Layer Deposition of SiN<sub>x</sub> Using Cyclosilazane and H<sub>2</sub>/N<sub>2</sub> Plasma

Remote Plasma Atomic Layer Deposition of SiN<sub>x</sub> Using Cyclosilazane and H<sub>2</sub>/N<sub>2</sub> Plasma

Silicon nitride (SiN<sub>x</sub>) thin films using 1,3-di-isopropylamino-2,4-dimethylcyclosilazane (CSN-2) and N<sub>2</sub> plasma were investigated. The growth rate of SiN<sub>x</sub> thin films was saturated in the range of 200−500 °C, yieldi...

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Bibliographic Details
Main Authors:	Haewon Cho, Namgue Lee, Hyeongsu Choi, Hyunwoo Park, Chanwon Jung, Seokhwi Song, Hyunwoo Yuk, Youngjoon Kim, Jong-Woo Kim, Keunsik Kim, Youngtae Choi, Suhyeon Park, Yurim Kwon, Hyeongtag Jeon
Format:	Article
Language:	English
Published:	MDPI AG 2019-08-01
Series:	Applied Sciences
Subjects:	atomic layer deposition remote plasma SiN<sub>x</sub> thin films
Online Access:	https://www.mdpi.com/2076-3417/9/17/3531

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