CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer
We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high supercondu...
| Main Authors: | , , , , , , , , , , , , |
|---|---|
| Format: | Article |
| Language: | English |
| Published: |
MDPI AG
2023-11-01
|
| Series: | Materials |
| Subjects: | |
| Online Access: | https://www.mdpi.com/1996-1944/16/23/7468 |
| _version_ | 1797399896369659904 |
|---|---|
| author | Zihao Yang Xiucheng Wei Pinku Roy Di Zhang Ping Lu Samyak Dhole Haiyan Wang Nicholas Cucciniello Nag Patibandla Zhebo Chen Hao Zeng Quanxi Jia Mingwei Zhu |
| author_facet | Zihao Yang Xiucheng Wei Pinku Roy Di Zhang Ping Lu Samyak Dhole Haiyan Wang Nicholas Cucciniello Nag Patibandla Zhebo Chen Hao Zeng Quanxi Jia Mingwei Zhu |
| author_sort | Zihao Yang |
| collection | DOAJ |
| description | We report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented δ-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or H<sub>c2</sub> (34.06 T boost in H<sub>c2</sub> for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications. |
| first_indexed | 2024-03-09T01:46:45Z |
| format | Article |
| id | doaj.art-3d301a6fc16b446e9b211213df234411 |
| institution | Directory Open Access Journal |
| issn | 1996-1944 |
| language | English |
| last_indexed | 2024-03-09T01:46:45Z |
| publishDate | 2023-11-01 |
| publisher | MDPI AG |
| record_format | Article |
| series | Materials |
| spelling | doaj.art-3d301a6fc16b446e9b211213df2344112023-12-08T15:21:21ZengMDPI AGMaterials1996-19442023-11-011623746810.3390/ma16237468CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si WaferZihao Yang0Xiucheng Wei1Pinku Roy2Di Zhang3Ping Lu4Samyak Dhole5Haiyan Wang6Nicholas Cucciniello7Nag Patibandla8Zhebo Chen9Hao Zeng10Quanxi Jia11Mingwei Zhu12Applied Materials Inc., Santa Clara, CA 95054, USADepartment of Physics, University at Buffalo—The State University of New York, Buffalo, NY 14260, USADepartment of Materials Design and Innovation, University at Buffalo—The State University of New York, Buffalo, NY 14260, USASchool of Materials Engineering, Purdue University, West Lafayette, IN 47907, USASandia National Laboratories, Albuquerque, NM 87185, USADepartment of Materials Design and Innovation, University at Buffalo—The State University of New York, Buffalo, NY 14260, USASchool of Materials Engineering, Purdue University, West Lafayette, IN 47907, USADepartment of Materials Design and Innovation, University at Buffalo—The State University of New York, Buffalo, NY 14260, USAApplied Materials Inc., Santa Clara, CA 95054, USAApplied Materials Inc., Santa Clara, CA 95054, USADepartment of Physics, University at Buffalo—The State University of New York, Buffalo, NY 14260, USADepartment of Materials Design and Innovation, University at Buffalo—The State University of New York, Buffalo, NY 14260, USAApplied Materials Inc., Santa Clara, CA 95054, USAWe report a milestone in achieving large-scale, ultrathin (~5 nm) superconducting NbN thin films on 300 mm Si wafers using a high-volume manufacturing (HVM) industrial physical vapor deposition (PVD) system. The NbN thin films possess remarkable structural uniformity and consistently high superconducting quality across the entire 300 mm Si wafer, by incorporating an AlN buffer layer. High-resolution X-ray diffraction and transmission electron microscopy analyses unveiled enhanced crystallinity of (111)-oriented δ-phase NbN with the AlN buffer layer. Notably, NbN films deposited on AlN-buffered Si substrates exhibited a significantly elevated superconducting critical temperature (~2 K higher for the 10 nm NbN) and a higher upper critical magnetic field or H<sub>c2</sub> (34.06 T boost in H<sub>c2</sub> for the 50 nm NbN) in comparison with those without AlN. These findings present a promising pathway for the integration of quantum-grade superconducting NbN films with the existing 300 mm CMOS Si platform for quantum information applications.https://www.mdpi.com/1996-1944/16/23/7468ultrathin superconducting filmNbNphysical vapor deposition |
| spellingShingle | Zihao Yang Xiucheng Wei Pinku Roy Di Zhang Ping Lu Samyak Dhole Haiyan Wang Nicholas Cucciniello Nag Patibandla Zhebo Chen Hao Zeng Quanxi Jia Mingwei Zhu CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer Materials ultrathin superconducting film NbN physical vapor deposition |
| title | CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer |
| title_full | CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer |
| title_fullStr | CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer |
| title_full_unstemmed | CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer |
| title_short | CMOS-Compatible Ultrathin Superconducting NbN Thin Films Deposited by Reactive Ion Sputtering on 300 mm Si Wafer |
| title_sort | cmos compatible ultrathin superconducting nbn thin films deposited by reactive ion sputtering on 300 mm si wafer |
| topic | ultrathin superconducting film NbN physical vapor deposition |
| url | https://www.mdpi.com/1996-1944/16/23/7468 |
| work_keys_str_mv | AT zihaoyang cmoscompatibleultrathinsuperconductingnbnthinfilmsdepositedbyreactiveionsputteringon300mmsiwafer AT xiuchengwei cmoscompatibleultrathinsuperconductingnbnthinfilmsdepositedbyreactiveionsputteringon300mmsiwafer AT pinkuroy cmoscompatibleultrathinsuperconductingnbnthinfilmsdepositedbyreactiveionsputteringon300mmsiwafer AT dizhang cmoscompatibleultrathinsuperconductingnbnthinfilmsdepositedbyreactiveionsputteringon300mmsiwafer AT pinglu cmoscompatibleultrathinsuperconductingnbnthinfilmsdepositedbyreactiveionsputteringon300mmsiwafer AT samyakdhole cmoscompatibleultrathinsuperconductingnbnthinfilmsdepositedbyreactiveionsputteringon300mmsiwafer AT haiyanwang cmoscompatibleultrathinsuperconductingnbnthinfilmsdepositedbyreactiveionsputteringon300mmsiwafer AT nicholascucciniello cmoscompatibleultrathinsuperconductingnbnthinfilmsdepositedbyreactiveionsputteringon300mmsiwafer AT nagpatibandla cmoscompatibleultrathinsuperconductingnbnthinfilmsdepositedbyreactiveionsputteringon300mmsiwafer AT zhebochen cmoscompatibleultrathinsuperconductingnbnthinfilmsdepositedbyreactiveionsputteringon300mmsiwafer AT haozeng cmoscompatibleultrathinsuperconductingnbnthinfilmsdepositedbyreactiveionsputteringon300mmsiwafer AT quanxijia cmoscompatibleultrathinsuperconductingnbnthinfilmsdepositedbyreactiveionsputteringon300mmsiwafer AT mingweizhu cmoscompatibleultrathinsuperconductingnbnthinfilmsdepositedbyreactiveionsputteringon300mmsiwafer |