Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics

Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics

Abstract A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS,...

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Bibliographic Details
Main Authors: Yu-De Lin, Pang-Shiu Chen, Heng-Yuan Lee, Yu-Sheng Chen, Sk. Ziaur Rahaman, Kan-Hsueh Tsai, Chien-Hua Hsu, Wei-Su Chen, Pei-Hua Wang, Ya-Chin King, Chrong Jung Lin
Format: Article
Language:English
Published: SpringerOpen 2017-06-01
Series:Nanoscale Research Letters
Subjects:
Retention
TaO/HfO x
TaO/AlO x
Self-rectifying
Resistive memory
Trapping-type
Online Access:http://link.springer.com/article/10.1186/s11671-017-2179-5

Internet

http://link.springer.com/article/10.1186/s11671-017-2179-5

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