Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics
Abstract A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS,...
| Main Authors: | , , , , , , , , , , |
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| Format: | Article |
| Language: | English |
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SpringerOpen
2017-06-01
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| Series: | Nanoscale Research Letters |
| Subjects: | |
| Online Access: | http://link.springer.com/article/10.1186/s11671-017-2179-5 |
| _version_ | 1797761972250345472 |
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| author | Yu-De Lin Pang-Shiu Chen Heng-Yuan Lee Yu-Sheng Chen Sk. Ziaur Rahaman Kan-Hsueh Tsai Chien-Hua Hsu Wei-Su Chen Pei-Hua Wang Ya-Chin King Chrong Jung Lin |
| author_facet | Yu-De Lin Pang-Shiu Chen Heng-Yuan Lee Yu-Sheng Chen Sk. Ziaur Rahaman Kan-Hsueh Tsai Chien-Hua Hsu Wei-Su Chen Pei-Hua Wang Ya-Chin King Chrong Jung Lin |
| author_sort | Yu-De Lin |
| collection | DOAJ |
| description | Abstract A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because the LRS during the SET process is limited by the internal resistor layer. However, if TaO/AlO x elements are stacked in layers, the LRS retention can be improved. The LRS retention time estimated by extrapolation method is more than 5 years at room temperature. Both TaO/HfO x - and TaO/AlO x -based RRAM structures have the same capping layer of TaO, and the activation energy levels of both types of structures are 0.38 eV. Moreover, the additional AlO x switching layer of a TaO/AlO x structure creates a higher O diffusion barrier that can substantially enhance retention, and the TaO/AlO x structure also shows a quite stable LRS under biased conditions. |
| first_indexed | 2024-03-12T19:20:44Z |
| format | Article |
| id | doaj.art-3d97a3c18f384278bd773d0cc0904cb6 |
| institution | Directory Open Access Journal |
| issn | 1931-7573 1556-276X |
| language | English |
| last_indexed | 2024-03-12T19:20:44Z |
| publishDate | 2017-06-01 |
| publisher | SpringerOpen |
| record_format | Article |
| series | Nanoscale Research Letters |
| spelling | doaj.art-3d97a3c18f384278bd773d0cc0904cb62023-08-02T05:10:25ZengSpringerOpenNanoscale Research Letters1931-75731556-276X2017-06-011211610.1186/s11671-017-2179-5Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch CharacteristicsYu-De Lin0Pang-Shiu Chen1Heng-Yuan Lee2Yu-Sheng Chen3Sk. Ziaur Rahaman4Kan-Hsueh Tsai5Chien-Hua Hsu6Wei-Su Chen7Pei-Hua Wang8Ya-Chin King9Chrong Jung Lin10Electronic and Optoelectronic System Research Laboratories, Industrial Technology Research InstituteDepartment of Chemical and Materials Engineering, MingShin University of Science and TechnologyElectronic and Optoelectronic System Research Laboratories, Industrial Technology Research InstituteElectronic and Optoelectronic System Research Laboratories, Industrial Technology Research InstituteElectronic and Optoelectronic System Research Laboratories, Industrial Technology Research InstituteElectronic and Optoelectronic System Research Laboratories, Industrial Technology Research InstituteElectronic and Optoelectronic System Research Laboratories, Industrial Technology Research InstituteElectronic and Optoelectronic System Research Laboratories, Industrial Technology Research InstituteElectronic and Optoelectronic System Research Laboratories, Industrial Technology Research InstituteMicroelectronics Laboratory, Institute of Electronics Engineering, National Tsing Hua UniversityMicroelectronics Laboratory, Institute of Electronics Engineering, National Tsing Hua UniversityAbstract A retention behavior model for self-rectifying TaO/HfO x - and TaO/AlO x -based resistive random-access memory (RRAM) is proposed. Trapping-type RRAM can have a high resistance state (HRS) and a low resistance state (LRS); the degradation in a LRS is usually more severe than that in a HRS, because the LRS during the SET process is limited by the internal resistor layer. However, if TaO/AlO x elements are stacked in layers, the LRS retention can be improved. The LRS retention time estimated by extrapolation method is more than 5 years at room temperature. Both TaO/HfO x - and TaO/AlO x -based RRAM structures have the same capping layer of TaO, and the activation energy levels of both types of structures are 0.38 eV. Moreover, the additional AlO x switching layer of a TaO/AlO x structure creates a higher O diffusion barrier that can substantially enhance retention, and the TaO/AlO x structure also shows a quite stable LRS under biased conditions.http://link.springer.com/article/10.1186/s11671-017-2179-5RetentionTaO/HfO xTaO/AlO xSelf-rectifyingResistive memoryTrapping-type |
| spellingShingle | Yu-De Lin Pang-Shiu Chen Heng-Yuan Lee Yu-Sheng Chen Sk. Ziaur Rahaman Kan-Hsueh Tsai Chien-Hua Hsu Wei-Su Chen Pei-Hua Wang Ya-Chin King Chrong Jung Lin Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics Nanoscale Research Letters Retention TaO/HfO x TaO/AlO x Self-rectifying Resistive memory Trapping-type |
| title | Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics |
| title_full | Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics |
| title_fullStr | Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics |
| title_full_unstemmed | Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics |
| title_short | Retention Model of TaO/HfO x and TaO/AlO x RRAM with Self-Rectifying Switch Characteristics |
| title_sort | retention model of tao hfo x and tao alo x rram with self rectifying switch characteristics |
| topic | Retention TaO/HfO x TaO/AlO x Self-rectifying Resistive memory Trapping-type |
| url | http://link.springer.com/article/10.1186/s11671-017-2179-5 |
| work_keys_str_mv | AT yudelin retentionmodeloftaohfoxandtaoaloxrramwithselfrectifyingswitchcharacteristics AT pangshiuchen retentionmodeloftaohfoxandtaoaloxrramwithselfrectifyingswitchcharacteristics AT hengyuanlee retentionmodeloftaohfoxandtaoaloxrramwithselfrectifyingswitchcharacteristics AT yushengchen retentionmodeloftaohfoxandtaoaloxrramwithselfrectifyingswitchcharacteristics AT skziaurrahaman retentionmodeloftaohfoxandtaoaloxrramwithselfrectifyingswitchcharacteristics AT kanhsuehtsai retentionmodeloftaohfoxandtaoaloxrramwithselfrectifyingswitchcharacteristics AT chienhuahsu retentionmodeloftaohfoxandtaoaloxrramwithselfrectifyingswitchcharacteristics AT weisuchen retentionmodeloftaohfoxandtaoaloxrramwithselfrectifyingswitchcharacteristics AT peihuawang retentionmodeloftaohfoxandtaoaloxrramwithselfrectifyingswitchcharacteristics AT yachinking retentionmodeloftaohfoxandtaoaloxrramwithselfrectifyingswitchcharacteristics AT chrongjunglin retentionmodeloftaohfoxandtaoaloxrramwithselfrectifyingswitchcharacteristics |