Formation of Point Defects Due to Aging under Natural Conditions of Doped GaAs

Formation of Point Defects Due to Aging under Natural Conditions of Doped GaAs

The aging dynamics of materials used to build the active part of optoelectronic devices is a topic of current interest. We studied epitaxial samples of GaAs doped with Ge and Sn up to <inline-formula><math xmlns="http://www.w3.org/1998/Math/MathML" display="inline">&l...

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Bibliographic Details
Main Authors: Samuel Zambrano-Rojas, Gerardo Fonthal, Gene Elizabeth Escorcia-Salas, José Sierra-Ortega
Format: Article
Language:English
Published: MDPI AG 2024-03-01
Series:Materials
Subjects:
point defects
vacancies
aging dynamics
natural conditions
doped GaAs
Online Access:https://www.mdpi.com/1996-1944/17/6/1399

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https://www.mdpi.com/1996-1944/17/6/1399

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