Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET

Investigation of Negative Bias Temperature Instability Effect in Partially Depleted SOI pMOSFET

The negative bias temperature instability (NBTI) mechanisms for Core and input/output (I/O) devices from a 130 nm partially-depleted silicon on insulator (PDSOI) technology are investigated. The I/O device degrades more than the Core device under the same stress electric field due to the different g...

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Bibliographic Details
Main Authors: Chao Peng, Zhifeng Lei, Rui Gao, Zhangang Zhang, Yiqiang Chen, Yunfei En, Yun Huang
Format: Article
Language:English
Published: IEEE 2020-01-01
Series:IEEE Access
Subjects:
Low frequency noise
negative bias temperature instability
silicon on insulator
TCAD simulation
Online Access:https://ieeexplore.ieee.org/document/9099551/

Internet

https://ieeexplore.ieee.org/document/9099551/

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